UltraRAM

UltraRAM is an emerging storage device technology and brand name that aims to "combine the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM," which means it could retain data like a hard drive. Silicon-based UltraRAM devices have demonstrated extrapolated data storage times (estimated lifespan based on testing) of at least 1,000 years, offering significant potential improvements over existing memory technologies.

It is being developed by researchers at Lancaster University's Physics and Engineering Department, in collaboration with the University of Warwick's Physics Department, who described it in a paper in 2022.

Though initial experiments at Lancaster have demonstrated its principles, UltraRAM remains largely theoretical, with ongoing efforts to improve quality, refine fabrication, and scale the technology for practical use. Additionally, the array-level simulations has been demonstrated to highlight the promise of this technology.

History

In 2023 the company Quinas was formed to further develop UltraRAM.

Memory Concept

ULTRARAM is a charge-based memory where the logic state is determined by the presence or absence of electrons in an FG (Front Gate). The FG is electrically isolated from the control gate (CG) by Al2O3 dielectric, and from the underlying channel by the InAs/AlSb TBRT heterostructure. The presence of electrons in the FG (defining a logic 0 state) depletes carriers in the underlying n-type InAs channel, reducing its conductance. Thus, the charge state of the FG and, therefore, the logic state of the memory, is read nondestructively by measuring the current through the channel when a voltage is applied between the source (S) and drain (D) contacts. The final component of the memory is the InAs back-gate (BG), which allows voltages to be applied vertically across the gate stack for various operations.