Static random-access memory
semiconductor memory that uses flip-flops to store each bit
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.
The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
Typically, SRAM is used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory.
History
Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. Metal–oxide–semiconductor SRAM (MOS-SRAM) was invented in 1964 by John Schmidt at Fairchild Semiconductor. The first device was a 64-bit MOS p-channel SRAM.
SRAM was the main driver behind any new CMOS-based technology fabrication process since the 1960s, when CMOS was invented.
In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a transistor gate and tunnel diode latch. They replaced the latch with two transistors and two resistors, a configuration that became known as the Farber-Schlig cell.
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