Photodiode
type of photodetector based on a p–n junction
A photodiode is a semiconductor diode sensitive to photon radiation, such as visible light, infrared or ultraviolet radiation, X-rays and gamma rays. It produces an electrical current when it absorbs photons. This can be used for detection and measurement applications, or for the generation of electrical power in solar cells. Photodiodes are used in a wide range of applications throughout the electromagnetic spectrum from visible light photocells to gamma ray spectrometers.
Principle of operation
A photodiode is a PIN structure or p–n junction. When a photon of sufficient energy strikes the diode, it creates an electron–hole pair. This mechanism is also known as the inner photoelectric effect. If the absorption occurs in the junction's depletion region, or one diffusion length away from it, these carriers are swept from the junction by the built-in electric field of the depletion region. Thus holes move toward the anode, and electrons toward the cathode, and a photocurrent is produced. The total current through the photodiode is the sum of the dark current (current that is passed in the absence of light) and the photocurrent, so the dark current must be minimized to maximize the sensitivity of the device.
“Photodiode” enters the record as type of photodetector based on a p–n junction. Crown Archives preserves that source wording while asking what Photodiode, type and photodetector can confirm, complicate or overturn.
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This entry incorporates text from “Photodiode” on English Wikipedia. Contributors are listed in the page history. Text is available under the Creative Commons Attribution-ShareAlike 4.0 License. Selected authority identifiers and statements are retrieved from Wikidata under CC0; their references and qualifiers remain part of the verification path.