Phase-change memory
type of non-volatile random-access memory
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element, generally made of titanium nitride, is used either to quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell.
Recent research on PCM has been directed towards attempting to find viable material alternatives to the phase-change material Ge2Sb2Te5 (GST), with mixed success. Other research has focused on the development of a GeTe–Sb2Te3 superlattice to achieve non-thermal phase changes by changing the co-ordination state of the germanium atoms with a laser pulse. This new interfacial phase-change memory (IPCM) has had many successes and continues to be the site of much active research.
Leon Chua has argued that all two-terminal non-volatile-memory devices, including PCM, should be considered memristors. Stan Williams of HP Labs has also argued that PCM should be considered a memristor. However, this terminology has been challenged, and the potential applicability of memristor theory to any physically realizable device is open to question.
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