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EUV lithography

a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm.

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Record originEnglish Wikipedia
Text licenseCC BY-SA 4.0
Source revisionSep 19, 2026
Entity authorityQ371965
Source-derived summary

Extreme ultraviolet lithography (EUVL or simply EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

As of 2025, ASML is the only company that produces and sells EUV systems for chip production, targeting 5 nanometer (nm) and 3 nm process nodes, though Reuters reported in December 2025 that China had developed its own prototype EUV lithography system, China is also pursuing alternative EUV light-source approaches, including accelerator based Steady-state microbunching (SSMB) and laser-induced discharge plasma (LDP).

The EUV wavelengths that are used in EUVL are near 13.5 nanometers (nm),to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.

History and economic impact

In the 1960s, visible light was used for the production of integrated circuits, with wavelengths as short as 435 nm (mercury G line).

Later, ultraviolet (UV) light was used, at first with a wavelength of 365 nm (mercury I line), then with excimer wavelengths, first of 248 nm (krypton fluoride laser), then 193 nm (argon fluoride laser), which was called deep UV.

The next step, going even smaller, was called extreme UV, or EUV. EUV light is absorbed by glass and air, so instead of using lenses to focus the beams of light as done previously, mirrors in vacuum would be needed. A reliable production of EUV was also problematic. Then, leading producers of steppers Canon and Nikon stopped development.

While working at Nippon Telegraph and Telephone (NTT) in mid-1980s Japan, engineer Hiroo Kinoshita first proposed the concept of EUV. He tested the idea and successfully demonstrated the first EUV images at a 1986 Japan Society of Applied Physics (JSAP) meeting. Despite initial scepticism in Japan, Kinoshita continued EUV research at NTT and organized joint US-Japan research on EUV in the early 1990s.

Editorial summary

Begin with the source’s own compact description: “EUV lithography” is a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm. The dossier treats that line as a proposition to test through lithography, next-generation and technology, not as a finished interpretation.

Editorial reviewA practical orientation to terminology and classification, particularly when read beside dated observations, specimens or technical literature. The current lead gives the account dated anchors—2025, 1986—that can be checked directly. The selected authority fields contribute no independent date. For this dossier, lithography, next-generation and technology is the immediate research focus.
Editorial analysis

Why this record matters

The phrase “a next-generation lithography technology using an extreme ultraviolet (EUV) wavelength, currently expected to be 13.5 nm” supplies a clear boundary for inquiry. It also exposes the unanswered questions: who defined that boundary, when it became stable and which sources sit outside it.

Evidence profile

The date and method of observation matter as much as the stated conclusion, especially where classification or consensus has changed. The source revision retrieved here is dated Sep 19, 2026. The linked authority identifier is Q371965. None of the 0 selected statements returned an explicit reference. The first chronological checks are 2025 and 1986.

Critical limits

A general summary may omit uncertainty, sample limits or methodological disagreement that is explicit in the technical record. The lead is largely declarative, so disagreement and counter-evidence require a deliberate search beyond the opening account. Authority statements aid reconciliation but still require their own references, qualifiers and ranks to be checked.

How to read it

Check terminology, classification and the date of the cited evidence. Scientific names and technical consensus can change while older records retain historical value.

Best used for
  • Current terminology
  • Classification context
  • Finding cited technical literature
Verify next

Primary datasets, specimen catalogues, standards bodies and the most recent peer-reviewed literature.

Three-step research path

  1. Establish the record: confirm the title “EUV lithography”, its source revision and the description used here.
  2. Expand the search: follow EUV lithography primary sources, EUV lithography archive and lithography research across catalogues and specialist indexes.
  3. Test the account: compare the strongest cited source with the responsible institution’s current record and note any disagreement.

Questions for further research

  1. Which source most directly establishes the central claim about “EUV lithography”?
  2. Is the terminology current, historical or disputed?
  3. Which observation, specimen, dataset or publication supports the account?
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Source & attribution

This entry incorporates text from EUV lithography” on English Wikipedia. Contributors are listed in the page history. Text is available under the Creative Commons Attribution-ShareAlike 4.0 License. Selected authority identifiers and statements are retrieved from Wikidata under CC0; their references and qualifiers remain part of the verification path.