90 nm process
semiconductor manufacturing processes with a 90 nm MOSFET technology node
The 90 nm process refers to the technology used in semiconductor manufacturing to create integrated circuits with a minimum feature size of 90 nanometers. It was an advancement over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes.
It was commercialized by the 2003–2005 timeframe, by semiconductor companies including Toshiba, Sony, Samsung, IBM, Intel, Fujitsu, TSMC, Elpida, AMD, Infineon, Texas Instruments and Micron Technology.
The origin of the 90 nm value is historical; it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).
The 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter.
The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm node. Yield issues associated with this transition (due to the use of new photoresists) were reflected in the high costs associated with this transition.
“90 nm process” enters the record as semiconductor manufacturing processes with a 90 nm MOSFET technology node. Crown Archives preserves that source wording while asking what process, semiconductor and manufacturing can confirm, complicate or overturn.
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This entry incorporates text from “90 nm process” on English Wikipedia. Contributors are listed in the page history. Text is available under the Creative Commons Attribution-ShareAlike 4.0 License. Selected authority identifiers and statements are retrieved from Wikidata under CC0; their references and qualifiers remain part of the verification path.